2013/04/15 by Andrew Das Arulsamy, Arulsamy, Andrew Das
Engineering · Physics and Astronomy · #FOS: Physical sciences #Magnetic Field Sensors Techniques #Magnetic properties of thin films #Quantum and electron transport phenomena #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.1304.4531
8 pages, 1 figure
arxiv created 2013/04/15 · openalex publication_date 2013/04/15 · arxiv updated 2013/04/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We derive the trial Hall resistance formula for the quantum Hall metals to address both the integer and fractional quantum Hall effects. Within the degenerate Landau levels, Zeeman splitting and level crossings in the presence of changing magnetic-field strength determine the Pancharatnam phase retardation, including the phase acceleration or deceleration, which are related to the changes in the phase and group momenta of a wavefunction. We discuss the relevant physical postulates with respect to Pancharatnam phase retardation to qualitatively reproduce the measured Hall resistance's zigzag curve for both the integer and the fractional filling factors. Along the way, we give out some hints to falsify our postulates with experiments.