Magnetic Induction Dependence of Hall Resistance in Fractional Quantum Hall Effect

2018/01/12 by Tadashi Toyoda, Toyoda, Tadashi
Physics and Astronomy · Materials Science · #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #Graphene research and applications

paper · pdf · doi:10.48550/arxiv.1801.04173

Abstract

We constructed a Hall resistance formula for the fractional quantum Hall effect by analyzing the experimental data reported in [J. P. Eisenstein and H. L. Stormer, Science \bf 248, 1510 (1990)]. The formula is given as a function of magnetic induction, chemical potential and temperature. The Hall resistance function contains a single-electron energy spectrum, which has phenomenological perturbation terms with three tunable parameters. The formula yields 12 plateaus that are consistent with the experiment. The perturbations can be interpreted as precession or nutation of a Landau orbital in the three-dimensional space.

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