2008/04/30 by Roman V. Gorbachev, R. V. Gorbachev, A. S. Mayorov +7 · 4 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Ballistic conduction #Charge (physics) #Charge carrier #Charge-carrier density #Conductance #Electron mobility #Gate voltage #Graphene #Graphene nanoribbons #Graphene research and applications #Layer (electronics) #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/nl801059v
published as Nano Lett. 8, 1995 (2008) · to be published in Nano Letters
arxiv created 2008/06/04 · openalex publication_date 2008/06/11 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realize p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.