2008/03/31 by Gyong Sok Song, Takashi Kataoka, Masaki Kobayashi +10
Engineering · Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #Silicon Carbide Semiconductor Technologies #Thin-Film Transistor Technologies #cond-mat.mtrl-sci
paper · pdf · doi:10.1143/jjap.47.7113
published as Jpn. J. Appl. Phys. 47, 7113 (2008) · 4 pages, 3 figures
arxiv created 2008/04/05 · openalex publication_date 2008/09/01 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
We have performed X-ray photoemission spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3C-SiC (3C-SiC:Mn) and carbon-incorporated Mn 5 Si 2 (Mn 5 Si 2 :C). The Mn 2p core-level XPS and XAS spectra of 3C-SiC:Mn and Mn 5 Si 2 :C were similar to each other and showed "intermediate" behaviors between the localized and itinerant Mn 3d states. The intensity at the Fermi level was found to be suppressed in 3C-SiC:Mn compared with Mn 5 Si 2 :C. These observations are consistent with the formation of Mn 5 Si 2 :C clusters in the 3C-SiC host, as observed in a recent transmission electron microscopy study.