2005/04/02 by J. I. Hwang, Y. Ishida, Masaki Kobayashi +18 · 1 citation
Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.72.085216
published as Phys. Rev. B Vol.72, 085216 (2005) · 6pages, 10figures. To be published to Phys. Rev. B
arxiv created 2005/04/02 · openalex publication_date 2005/08/17 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/01
We have studied the electronic structure of the diluted magnetic semiconductor Ga_1\ensuremath-xMnxN (x=0.0, 0.02, and 0.042) grown on Sn-doped n-type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L-edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a MnN4 cluster model. The deduced electronic structure parameters reveal that the p\text\ensuremath-d exchange coupling in Ga_1\ensuremath-xMnxN is stronger than that in Ga_1\ensuremath-xMnxAs.