2001/08/09 by S. Sonoda, Saki Sonoda, Saburo Shimizu +6 · 2 citations
Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/s0022-0248(01)02183-2
5 pages
arxiv created 2001/08/09 · openalex publication_date 2002/04/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Wurtzite (Ga,Mn)N films showing ferromagnetic behaviour at room temperature were successfully grown on sapphire(0001) substrates by molecular beam epitaxy using ammonia as nitrogen source. Magnetization measurements were carried out by a superconducting quantum interference device at the temperatures between 1.8K and 300K with magnetic field applied parallel to the film plane up to 7T. The magnetic-field dependence of magnetization of a (Ga,Mn)N film at 300K were ferromagnetic, while a GaN film showed Pauli paramagnetism like behaviour. The Curie temperatures of a (Ga,Mn)N film was estimated as 940K.