2008/07/04 by A. Lemaître, Aristide Lemaître, Audrey Miard +15 · 2 citations
Materials Science · Physics and Astronomy · #Heusler alloys: electronic and magnetic properties #Magnetic properties of thin films #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2963979
published as Applied Physics Letters 93 (2008) 021123
arxiv created 2008/07/04 · openalex publication_date 2008/07/14 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
A small fraction of phosphorus (up to 10%) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects strongly affect the domain wall propagation.