2012/11/29 by T. Niazi, Tarik Niazi, M. Cormier +11
Materials Science · Physics and Astronomy · #Anisotropy #Bilayer #Electric field #Ferromagnetism #Hall effect #Magnetic anisotropy #Magnetic field #Magnetic properties of thin films #Quantum and electron transport phenomena #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4798258
arxiv created 2012/11/29 · openalex publication_date 2013/03/25 · arxiv updated 2015/06/12 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy are controlled by the gate voltage of a field effect device. Anomalous Hall effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ∼4 over the explored gate-voltage range so that the transition to an out-of-plane easy-axis configuration is almost reached.