2007/07/30 by Peter Stone, Peter R. Stone, Jeffrey W. Beeman +4 · 1 citation
Materials Science · Physics and Astronomy · #Heusler alloys: electronic and magnetic properties #Magnetic and transport properties of perovskites and related materials #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.physb.2007.08.210
published as Physica B 401-402, 454 (2007) · 14 pages, 4 figures. Accepted for publication in the Proceedings of the 24th International Conference on Defects in Semiconductors, which will be released in the journal Physica B: Condensed Matter
arxiv created 2007/07/30 · openalex publication_date 2007/09/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga1-xMnxAs grown on larger lattice constant (In,Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga1-xMnxAs1-yPy with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases.