2007/03/11 by T. Dietl, Tomasz Dietl · 3 citations
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Ga2O3 and related materials #ZnO doping and properties #cond-mat.dis-nn #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1103/physrevb.77.085208
published as Phys. Rev. B 77 (2008) 085208. · 5 pages, 3 figures
arxiv created 2007/03/11 · openalex publication_date 2008/02/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The strong coupling between valence-band holes and localized spins gives rise to a midgap Zhang--Rice-like state, to a sign reversal of the apparent p\text\ensuremath-d exchange integral, and to an increase of the band gap with the magnetic ion concentration.