Controlled Aggregation of Magnetic Ions in a Semiconductor: An Experimental Demonstration

2008/04/21 by A. Bonanni, A. Navarro-Quezada, A. Navarro‐Quezada +13 · 115 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Chemical physics #Chemistry #Condensed matter physics #Doping #Electronic and Structural Properties of Oxides #Impurity #Ion #Magnetic semiconductor #Materials science #Nanoscopic scale #Nanotechnology #Optoelectronics #Physics #Semiconductor #Semiconductor device #Semiconductor materials and devices #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.101.135502

published in Physical Review Letters 101(13), 135502 (American Physical Society) · 4 pages, 3 figures

arxiv created 2008/04/21 · openalex publication_date 2008/09/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by the growth rate and doping with shallow impurities.

Citations

• Hole states in wide band-gap diluted magnetic semiconductors and oxides
• Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides (invited)

Cited by

• Planar arrays of magnetic nanocrystals embedded in GaN