2007/08/24 by W. Pacuski, P. Kossacki, D. Ferrand +10 · 1 citation
Engineering · Physics and Astronomy · #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.100.037204
published as Phys. Rev. Lett. 100, 037204 (2008) · 4 pages, 2 figures
arxiv created 2007/08/24 · openalex publication_date 2008/01/24 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The giant Zeeman splitting of free excitons is measured in Ga_1\ensuremath-xFexN. Magneto-optical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p\ensuremath-d exchange energy governing the interaction between Fe3+ ions and holes in GaN, N0\ensuremathβ(app)=+0.5\ifmmode±\else\textpm\fi0.2 eV. This finding corroborates the recent suggestion that the strong p\ensuremath-d hybridization specific to nitrides and oxides leads to significant renormalization of the valence band exchange splitting.