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Disappearance of Metal-Like Behavior in GaAs Two-Dimensional Holes below 30 mK

2007/05/29 by Jian Huang, J. S. Xia, Jicheng Xia +3 · 2 citations
Physics and Astronomy · #Condensed matter physics #Crossover #Electrical resistivity and conductivity #Materials science #Metal #Metallurgy #Metal–insulator transition #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor Quantum Structures and Devices #Sign (mathematics) #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.98.226801

published as Phys. Rev. Lett. 98, 226801 (2007)

openalex publication_date 2007/05/29 · arxiv created 2007/12/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The zero-field temperature dependence of the resistivity of two-dimensional holes is observed to exhibit two qualitatively different characteristics for a fixed carrier density for which only the metallic behavior of the so-called metal-insulator transition is anticipated. As T is lowered from 150 to 0.5 mK, the sign of the derivative of the resistivity with respect to T changes from being positive to negative when the temperature is lowered below approximately 30 mK and the resistivity continuously rises with cooling down to 0.5 mK, suggesting a crossover from being metal-like to insulatorlike.

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