Characteristic Sign Change of the Magnetoresistance of Strongly Correlated GaAs Two-dimensional Holes

2013/06/27 by Jian Huang, L. N. Pfeiffer, Huang, Jian +3
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1306.6666

arxiv created 2013/06/27 · arxiv updated 2013/07/01

Abstract

High quality strongly correlated two-dimensional (2D) electron systems at low temperatures T→ 0 exhibits an apparent metal-to-insulator transition (MIT) at a large r_s value around 40. We have measured the magnetoresistance of 2D holes in weak perpendicular magnetic field in the vicinity of the transition for a series of carrier densities ranging from 0.2-1.5×10¹⁰ cm^-2. The sign of the magnetoresistance is found to be charge density dependent: in the direction of decreasing density, the sign changes from being positive to negative across a characteristic value that coincides with the critical density of MIT.

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