2005/12/22 by Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch +3 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Carbon nanotube #Channel (broadcasting) #Current (fluid) #Nanoelectronics #Nanopore and Nanochannel Transport Studies #Nanostructure #Nanotube #Noise (video) #Quantum and electron transport phenomena #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1021/nl052528d
published as Nano Lett. 2006; 6(5); 930-936
arxiv created 2005/12/22 · openalex publication_date 2006/04/06 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We present a systematic study on low-frequency current fluctuations of nanodevices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g., Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.