2013/04/30 by Olli Herranen, Deep Talukdar, Markus Ahlskog +1
Engineering · Materials Science · Physics and Astronomy · #Acoustics #Analog and Mixed-Signal Circuit Design #Ballistic conduction #Carbon Nanotubes in Composites #Carbon nanotube #Carbon nanotube field-effect transistor #Dielectric #Electron #Field-effect transistor #Infrasound #Materials science #Mechanical and Optical Resonators #Nanotechnology #Nanotube #Noise (video) #Optoelectronics #Physics #Schottky barrier #Schottky diode #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1016/j.carbon.2014.04.050
openalex publication_date 2014/04/24 · arxiv created 2014/05/05 · arxiv updated 2014/05/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report an experimental noise study of intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube (IS-MWCNT) devices. The noise is two orders of magnitude lower than in singlewalled nanotubes (SWCNTs) and has no length dependence within the studied range. In these channel limited devices with small or negligible Schottky barriers the noise is shown to originate from the intrinsic potential fluctuations of charge traps in the gate dielectric. The gate dependence of normalized noise can be explained better using ballistic the charge noise model rather than diffusive McWhorter model. The results indicate that the noise properties of IS-MWCNTs are closer to SWCNTs than thicker MWCNTs. These results can be utilized in future to analyze noise in other purely ballistic nanoscale devices.