2007/01/31 by N. Clément, Nicolas Clément, Nicolas Clement +9
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Algorithm #Analytical Chemistry (journal) #Artificial intelligence #Chemistry #Computer science #Crystallography #Energy (signal processing) #Molecular Junctions and Nanostructures #Noise (video) #Physics #Quantum mechanics #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.76.205407
published as Phys. Rev. B 76, 205407 (2007). · Phys. Rev. B, in press
openalex publication_date 2007/11/08 · arxiv created 2010/03/06 · arxiv updated 2010/03/09 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n\text\ensuremath-Si/alkyl chain (C18H37)∕Al junctions, exhibit a clear 1∕f^\ensuremathγ power spectrum noise with 1<\ensuremathγ<1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI∕I2). However, a local increase is also observed over a certain bias range, mainly if V>0.4\phantom\rule0.3em0exV, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\ensuremath∂I∕\ensuremath∂V)2. A model is proposed showing qualitative agreements with our experimental data.