2007/05/21 by Sandip Dhara, S. Dhara, Sharat Chandra +15 · 1 citation
Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2741410
published as Applied Physics Letters 90 (21) 213104 (2007) · 13 pages, 5 figures, Journal
openalex publication_date 2007/05/21 · arxiv created 2007/08/16 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
UV Raman scattering studies show longitudinal optical (LO) mode up to fourth order in wurtzite GaN nanowire system. Fröhlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant observation. Calculated size dependence, incorporating size corrected dielectric constants, of electron-phonon interaction energy agrees well with measured values and also predict stronger interaction energy than that of the bulk for diameter below ∼3nm.