High resolution spectroscopy and narrow resonances from InGaN quantum dots in GaN nanowires

2015/09/13 by Cameron Nelson, Nelson, Cameron, Saniya Deshpande +9
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Other Condensed Matter (cond-mat.other) #Quantum Physics (quant-ph)

paper · pdf · doi:10.48550/arxiv.1509.03886

openalex publication_date 2015/09/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/01

Abstract

High resolution coherent nonlinear optical spectroscopy of an ensemble of red-emitting InGaN quantum dots in GaN nanowires is reported. The data show a pronounced atom-like interaction between resonant laser fields and quantum dot excitons at low temperature that is difficult to observe in the linear absorption spectrum due to inhomogeneous broadening from indium fluctuation effects. We find that the nonlinear signal persists strongly at room temperature. The robust atom-like room temperature response indicates the possibility that this material could serve as the platform for proposed excitonic based applications without the need of cryogenics.

Related

• Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature
• Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
• Indium gallium nitride quantum dots: Consequence of random alloy fluctuations for polarization entangled photon emission
• A Photonic Atom Probe Analysis of the Effect of Extended and Point Defects on the Luminescence of InGaN/GaN Quantum Dots
• Characterization of the optical response from variant InGaN nanowires emitting within the green spectral gap