Electron-Phonon Coupling in Wurtzite Semiconductors: Intervalley Scattering Selection Rules for Hexagonal GaN

2013/09/30 by K. M. Borysenko, Borysenko, K. M., M. El-Batanouny +3
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.1310.0079

7 pages, 5 figures

arxiv created 2013/09/30 · arxiv updated 2013/10/02

Abstract

Selection rules are presented for electron-phonon scattering in GaN with the wurtzite crystal structure. The results are obtained for the interband scattering between the lowest conduction band (Γ-valley) and the second conduction band (U-valley). These selection rules are derived based on the original group-theoretical analysis of the crystal vibrations in GaN, which included detailed compatibility relations for all phonon modes.

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