Effect of optical phonon scattering on the performance of GaN transistors

2010/08/06 by Debdeep Jena, Jena, Debdeep, Siddharth Rajan +1
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1008.1154

4 pages, 2 figures

arxiv created 2010/08/06 · arxiv updated 2010/08/09

Abstract

A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high speed behavior of short gate length GaN transistors. The model is able to resolve these peculiarities, and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical phonon scattering is strong.

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