Surface optical phonon scattering in N-polar GaN quantum well channels

2013/07/24 by Uttam Singisetti, Singisetti, Uttam
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #GaN-based semiconductor devices and materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Thermal properties of materials #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1307.6405

4 figures

arxiv created 2013/07/24 · openalex publication_date 2013/07/24 · arxiv updated 2013/07/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

N-polar GaN channel mobility is important for high frequency device applications. In this Letter, we report the theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2-DEG) in N-polar GaN quantum well channels with high-k dielectrics. The effect of SO phonons on 2-DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with high-k dielectrics is low and limits the total mobility. The SO scattering for SiNx dielectric GaN was found to be negligible due to its high SO phonon energy.

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