2006/06/01 by P. Colantonio, Paolo Colantonio, F. Giannini +9 · 82 citations
Engineering · Physics and Astronomy · #Advanced Power Amplifier Design #Amplifier #Bandwidth (computing) #CMOS #Direct-coupled amplifier #Electrical engineering #Engineering #GaN-based semiconductor devices and materials #Intermodulation #Linear amplifier #Materials science #Operational amplifier #Optoelectronics #Power bandwidth #Power-added efficiency #RF power amplifier #Radio Frequency Integrated Circuit Design #Telecommunications
paper · doi:10.1109/tmtt.2006.874872
published in IEEE Transactions on Microwave Theory and Techniques 54(6), 2713-2722 (IEEE Microwave Theory and Techniques Society)
openalex publication_date 2006/06/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/11
In this paper, the design, fabrication, and test of high-efficiency, high-power C-band harmonic-tuned power amplifiers in GaN technology is reported. The amplifier has been designed utilizing second-harmonic tuning for high-efficiency operation, thus exploiting the high-breakdown voltage peculiarity of GaN-based devices. Realized in a hybrid form, the amplifier has been characterized in terms of small-signal, power, and intermodulation (IMD) performance. An operating bandwidth over 20% around 5.5 GHz, with 33-dBm minimum output power, and 60% drain efficiency at center frequency is demonstrated, together with low IMD