GaN-on-Si Power Technology: Devices and Applications

2017/02/27 by Kevin J. Chen, Oliver D. Häberlen, Oliver Haberlen +6 · 1,644 citations
Engineering · Physics and Astronomy · #Commercialization #Computer science #Electrical engineering #Electronic engineering #Electronics #Engineering #Engineering physics #GaN-based semiconductor devices and materials #Gallium nitride #MOSFET #Materials science #Nanotechnology #Physics #Power (physics) #Power MOSFET #Power electronics #Power module #Power semiconductor device #Reliability (semiconductor) #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies #Transistor #Voltage

paper · doi:10.1109/ted.2017.2657579

published in IEEE Transactions on Electron Devices 64(3), 779-795 (Institute of Electrical and Electronics Engineers)

openalex publication_date 2017/02/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29

Abstract

In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

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