Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

2024/01/10 by M. Buffolo, Matteo Buffolo, D. Favero +9 · 393 citations
Engineering · Physics and Astronomy · #Computer science #Converters #Electrical engineering #Electronic engineering #Electronics #Engineering #Engineering physics #GaN-based semiconductor devices and materials #Gallium nitride #Materials science #Nanotechnology #Optoelectronics #Physics #Power (physics) #Power electronics #Power semiconductor device #Reliability (semiconductor) #Robustness (evolution) #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies #Silicon carbide #Transistor #Voltage #Wide-bandgap semiconductor

paper · pdf · doi:10.1109/ted.2023.3346369

published in IEEE Transactions on Electron Devices 71(3), 1344-1355 (Institute of Electrical and Electronics Engineers)

openalex publication_date 2024/01/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04

Abstract

We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Material properties and structural differences among GaN and SiC devices are first discussed. Based on the analysis of different commercially available GaN and SiC power transistors, we describe the state-of-the-art of these technologies, highlighting the preferential power conversion topologies and the key characteristics of each technological platform. Current and future fields of application for GaN and SiC devices are also reviewed. The article also reports on the main reliability aspects related to both technologies. For GaN HEMTs, threshold voltage stability, dynamic ON-resistance, and breakdown limitation are described, whereas for SiC MOSFETs the analysis also focuses on gate oxide failure and short-circuit (SC) robustness. Finally, we give an overview on the perspective of such materials in different fields of interest. An indication of possible future improvements and developments for both technologies is drawn. The requirements for hybrid converters, along with a careful optimization of performance and the use of innovative optimization tools, are underlined.

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