Hot-electron and hole-emission effects in short n-channel MOSFET's

1985/03/01 by K.R. Hofmann, C. Werner, W. Weber +1 · 3 citations
Engineering · #Semiconductor materials and devices #Advancements in Semiconductor Devices and Circuit Design #Silicon Carbide Semiconductor Technologies

paper · doi:10.1109/t-ed.1985.22000

Abstract

This paper presents a comparison of hot-carrier degradation experiments with simulations of hot electron and hole emission into the oxide. It is shown that both the emission of holes and of electrons are essential to explain the dominant generation of negative charge by a new degradation mechanism. Moreover, a peak of positive-charge generation at a gate voltage close to threshold was found in our experiments which is due to hole trapping. A simple degradation model based on the calculated electron and hole emission is presented which gives a very good description of the observed behavior of degradation effects.

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