Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

2020/03/05 by Zhuoqing Yu, Zixuan Sun, Runsheng Wang +2 · 6 citations
Engineering · #Semiconductor materials and devices #Advancements in Semiconductor Devices and Circuit Design #Ferroelectric and Negative Capacitance Devices

paper · doi:10.1109/ted.2020.2974864

Abstract

In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is studied with decomposing the variation contributions of multiple types of traps. The nonlinear relationship of μ-σ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (ΔVth) are newly observed in both n- and p-type FinFETs. A multi-trap-based HCD variation model is proposed and verified in FinFETs. The impacts of HCD variations on the static random-access memory (SRAM) read/write stability are also demonstrated with the circuit simulation. The results are beneficial for the reliability-aware circuit design against HCD variability particularly for FinFET-based circuits.

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