2021/07/24 by Vishal Jha, Harshad Surdi, Mohammad Faizan Ahmad +8 · 1 citation
Engineering · Materials Science · #Diamond and Carbon-based Materials Research #Metal and Thin Film Mechanics #Semiconductor materials and devices
paper · pdf · doi:10.1016/j.sse.2021.108154
openalex publication_date 2021/07/24 · crossref created 2021/07/24 · crossref issued 2021/12/01 · crossref published 2021/12/01 · crossref published-print 2021/12/01 · openalex created_date 2025/10/10 · crossref deposited 2026/04/29 · crossref indexed 2026/07/31 · openalex updated_date 2026/08/02
The electrical characteristics of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition have been measured from DC to 25 GHz and used to extract the small-signal parameters for a lumped-element compact model. The model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage behavior, as well as the insertion and reflection loss. The high thermal conductivity of diamond makes the diodes ideally suited for high power radar receiver protector applications. We demonstrate that under forward bias a single diode can provide 14 dB of input power attenuation. For self-biased limiter applications, a two-stage circuit with back-to-back diodes has been simulated using the diode model to show > 20 dB of attenuation at an input power of 50 dBm.