2019/01/29 by Namita Narendra, Narendra, Namita, J. Narayan +3 · 1 citation
Engineering · Materials Science · #Applied Physics (physics.app-ph) #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Metal and Thin Film Mechanics #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1901.10572
openalex publication_date 2019/01/29 · openalex created_date 2019/02/21 · openalex updated_date 2026/07/28
Diamond is a promising material for high-power electronic applications in both the dc and rf domains. However, the predicted advantages are yet to be realized for a number of technical challenges. In particular, n-type devices have not been feasible due to the large ionization energies and low thermodynamic solubility limits of n-dopants. Motivated by the recent advances in nonequilibrium processing, we propose and theoretically examine a diamond/c-BN HEMT that can circumvent the critical limitations. A first-principles calculation suggests the desired type-I alignment at the heterojunction of these two nearly lattice matched semiconductors. The investigation also illustrates that a large sheet carrier density in excess of 5×1012~\mathrmcm-2 can be induced in the undoped diamond channel by the gate bias. A subsequent analysis of a simple prototype design indicates that the proposed device can achieve large current drive (~10 A/cm), low Ron (∼ 0.05 ~ mΩ⋅ cm2), and high fT (~300 GHz) simultaneously.