Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

2024/09/12 by Yosuke Sasama, Takuya Iwasaki, Mohammad Monish +3
#Field-effect transistors #Hydrogen-terminated diamond #Self-aligned gate electrode #hexagonal boron nitride

paper · doi:10.48505/nims.4743

Abstract

Applied Physics Letters. 125 [9] (2024)

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