[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility

2022/12/19 by International Center for Materials Nanoarchitectonics (WPI-MANA)
#diamond #field-effect transistor #graphite #hBN #hBN/h-BN #hexagonal boron nitride #hydrogen-terminated #mobility #wide bandgap

paper · doi:10.48505/nims.3818

Abstract

A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, which can lead to reduced conduction loss and higher operational speeds.

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