2023/10/09 by Yulei Jin, Feng Zhou, Weizong Xu +13 · 15 citations
Engineering · Materials Science · Mathematics · Physics and Astronomy · #Arithmetic #Computer science #Doping #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Machine learning #Materials science #Mathematics #Notation #Optoelectronics #Physics #Semiconductor materials and devices #Stability (learning theory)
paper · doi:10.1109/ted.2023.3315252
published in IEEE Transactions on Electron Devices 70(11), 5596-5602 (Institute of Electrical and Electronics Engineers)
openalex publication_date 2023/10/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
Highly stable threshold voltage(V_\text TH)characteristics are an essential reliability requirement for p -GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate bias stresses for power applications. In this work, we demonstrate high-V_\text TH(3.0 V) p-GaN HEMTs with robustV_\text THstability by p -GaN gate engineering via Mg doping and activation. TheV_\text THdegradation rates of the resulting device under both pulsed-I/Vand bias temperature instability (BTI) stress conditions are less than 10% at high temperatures up to 150°, which is much lower than that of conventional Schottky-type p -GaN HEMTs (20%–30%). Such notableV_\text THcharacteristics are due to the impact ionization (I.I.)-dependent hole compensation under certain gate stress, which effectively alleviates the electron trapping effect and reduces positiveV_\text THshift. The I.I. occurring in the fully depleted p -GaN layer has been confirmed by both positive temperature-dependent gate breakdown characteristics and numerical simulations. Furthermore, shallow- and deep-level hole traps are identified in the gate-stack of high-V_\text THdevices by performing the deep-level transient spectroscopy (DLTS) technique. Consequently, the trapping effect associated with hole traps may also alleviate the undesired electron-trapping-inducedV_\text THshift. These results provide a critical understanding of theV_\text THstability of the high-V_\text THp -GaN HEMTs (HVT-HEMTs) and important design guidance for commercial device development.