Ultra-scaled MoS 2 transistor towards 1-nm-node electronics

2026/04/03 by Honglin Song, Jie Jiang · 1 voice
Engineering · Materials Science · #2D Materials and Applications #Nanowire Synthesis and Applications #Photonic and Optical Devices

paper · pdf · doi:10.1088/2631-7990/ae5b8b

openalex publication_date 2026/04/03 · openalex created_date 2026/04/04 · openalex updated_date 2026/06/13

Abstract

Abstract The submitted manuscript is Highlights which don't need the Abstract section.

Citations

• Promises and prospects of two-dimensional transistors

Discussions

• Ultra-scaled #MoS₂ #Transistors achieve aggressive scaling, low contact resistance, and near-1-nm-node performance, advancing #2DSemiconductor for next-generation ultra-dense, low-power electronic tec [bsky, 1 points, 0 comments]

Related

• [Research Highlights Vol.77] New TEM Technique Creates 2.8nm Transistor
• MoS2 Nanoribbon Transistor for Logic Electronics
• Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors
• Mobility overestimation in MoS₂ transistors due to invasive voltage probes
• Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling