2004/05/24 by L. H. Yu, Lam H Yu, Douglas Natelson +1 · 2 citations
Chemistry · Engineering · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1088/0957-4484/15/10/004
published as Nanotechnology 15, S517 (2004) · 15 pages, 8 figures. To appear in Oct. 2004 issue of Nanotechnology, proceedings of International Conference on Nanoscale Devices and Systems Integration
arxiv created 2004/05/24 · openalex publication_date 2004/07/24 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C 60 -based devices, and gate-modulated negative differential resistance (NDR) in 'control' devices that we ascribe to adsorbed contamination. We discuss the need for a statistical approach to device characterization, and the criteria that must be satisfied to infer that transport is based on single molecules. We describe apparent Kondo physics in C 60 -based single-molecule transistors (SMTs), including signatures of molecular vibrations in the Kondo regime. Finally, we report gate-modulated NDR in devices made without intentional molecular components, and discuss possible origins of this property.