2006/09/18 by G. D. Scott, Gavin D. Scott, Kelly S. Chichak +9 · 1 citation
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.74.113404
published as G. D. Scott, K. S. Chichak, A. J. Peters, S. J. Cantrill, J. F. Stoddart, and H. W. Jiang, Phys. Rev. B, 74, 113404 (2006) · 4 pages, 4 figures
openalex publication_date 2006/09/18 · arxiv created 2006/11/06 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We have studied charge transport through individual Borromean ring complexes, both with and without anchor groups, in gated double-barrier tunneling junctions (DBTJs) formed using the electrical breakjunction technique on gold nanowires. While common single-molecule device characteristics can be observed with either form of the Borromean rings, the complexes with anchor groups show a strong rectification of conduction in a relatively high percentage of samples. We present our data along with a simple model underlining the mechanism by which the arrangement and composition of the weakly bonding anchor groups attached to the electroactive element may promote a device configuration resulting in rectification.