2004/03/31 by Pablo S. Cornaglia, P. S. Cornaglia, H. Ness +1 · 4 citations
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.93.147201
published as Phys. Rev. Lett. 93, 147201 (2004) · 4 pages, 4 figures, minor changes, added references
arxiv created 2004/10/01 · arxiv updated 2009/12/01
The conductance through a molecular device including electron-electron and electron-phonon interactions is calculated using the Numerical Renormalization Group method. At low temperatures and weak electron-phonon coupling the properties of the conductance can be explained in terms of the standard Kondo model with renormalized parameters. At large electron-phonon coupling a charge analog of the Kondo effect takes place that can be mapped into an anisotropic Kondo model. In this regime the molecule is strongly polarized by a gate voltage which leads to rectification in the current-voltage characteristics of the molecular junction.