Coherent Backscattering near the Two-Dimensional Metal-Insulator Transition

2002/10/31 by Maryam Rahimi, S. Anissimova, M. R. Sakr +2 · 1 citation
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.91.116402

published as Phys. Rev. Lett. 91, 116402 (2003) · to appear in PRL

arxiv created 2003/08/02 · openalex publication_date 2003/09/09 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.

Citations

• Novel phenomena in dilute electron systems in two dimensions
• Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system

Cited by

• Metal–insulator transition in two-dimensional electron systems

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• Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon