1999/05/11 by Xiao-Yong Feng, X. G. Feng, Dragana Popović +5
Engineering · Physics and Astronomy · #Advanced Materials Characterization Techniques #Magnetic properties of thin films #Surface and Thin Film Phenomena #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/9905141
5 pages, latex, (usues moriond.sty, included) plus three postscript figures, Proceedings of the Rencontres de Moriond 1999
arxiv created 1999/05/11 · arxiv updated 2009/11/30
We study the effect of the disorder on the metallic behavior of a two-dimensional electron system in silicon. The temperature dependence of conductivity σ(T) was measured for different values of substrate bias, which changes both potential scattering and the concentration of disorder-induced local magnetic moments. We find that the latter has a much more profound effect on dσ/dT. In fact, the data suggest that in the limit of T→ 0 the metallic behavior, as characterized by dσ/dT < 0, is suppressed by an arbitrarily small amount of spin flip scattering by local magnetic moments.