2023/01/19 by Chenlu Wang, Qinglong Yan, Chunxu Su +11 · 1 citation
Materials Science · #Electronic and Structural Properties of Oxides #Ga2O3 and related materials #ZnO doping and properties
paper · doi:10.1109/led.2023.3237598
openalex publication_date 2023/01/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
In this work, we have achieved novel lateral enhancement-mode (E-M) and depletion-mode (D-M)β -Ga2O3 metal-oxide-semiconductor junction field-effect- transistors (MOS-JFETs) featuring a low gate leakage current (I_\text G) and a large gate swing. Ascribing to the high-quality SiO2 layer above the P-NiO_\text X/N-Ga2O3 heterojunction (HJ), theIGwas suppressed for over 6 orders of magnitudes when compared with the heterojunction FET (HJ-FET). An off-state drain current of ~10^-7mA/mm was also achieved at elevated temperature (T) up to 200 °C, indicating strong thermal stability of our device. The depletion-mode (D-M) MOS-JFET with source-to-drain spacing (L_\text SD) of12 ~μ mdemonstrates a breakdown voltage (BV) of 1.32 kV and specific on-resistance (R_\text on,\text sp) of 4.4mΩ ⋅ cm2, delivering a high Baliga’s power figure of merit (PFOM) of 405 MW/cm2. Due to the potential ofβ -Ga2O3 MOS-JFET in power electronics, these findings offer a compel ling pathway for future high-power and high-efficiency systems.