2021/04/09 by Nidhin Kurian Kalarickal, Zhanbo Xia, Hsien‐Lien Huang +6 · 4 citations
Materials Science · #Ga2O3 and related materials #ZnO doping and properties #Electronic and Structural Properties of Oxides
paper · doi:10.1109/led.2021.3072052
Maintaining high average fields between the gate and drain is imperative in achieving near theoretical performance in ultra-wide band gap semiconductors like β-Ga2O3. In this letter we report on a field management strategy to reduce the peak electric field at the drain side corner of the gate by using a composite dielectric layer consisting of an extreme permittivity dielectric like BaTiO3and a low- κ dielectric like SiO2overlapped over the gate electrode. Using this strategy in β-(Al0.18Ga0.82)2O3/ Ga2O3double heterojunction field effect transistor, we achieved a record average breakdown field of 5.5 MV/cm at a gate-drain spacing of 1.15 μm along with an improved power figure of merit of 408 MW/cm2. The reported works shows the effectiveness of integrating extreme dielectric materials with ultra-wide band gap semiconductors in significantly improving breakdown performance.