2020/06/03 by Nidhin Kurian Kalarickal, Kalarickal, Nidhin Kurian, Zixuan Feng +17 · 1 citation
Engineering · Materials Science · #Applied Physics (physics.app-ph) #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ga2O3 and related materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2006.02349
openalex publication_date 2020/06/03 · openalex created_date 2022/07/26 · openalex updated_date 2026/07/28
The performance of ultra-wide band gap materials like\n\β-Ga_\2O_\3 is critically dependent on achieving high\naverage electric fields within the active region of the device. In this report,\nwe show that high-k gate dielectrics like BaTiO_\3 can provide an\nefficient field management strategy by improving the uniformity of electric\nfield profile in the gate-drain region of lateral field effect transistors.\nUsing this strategy, we were able to achieve high average breakdown fields of\n1.5 MV/cm and 4 MV/cm at gate-drain spacing (L_\gd) of 6 um and 0.6\num respectively in \β-Ga_\2O_\3, at a high channel\nsheet charge density of 1.8x10^\13cm^\-2. The high sheet\ncharge density together with high breakdown field enabled a record power figure\nof merit (V^\2_\br/R_\on) of 376\nMW/cm^\2 at a gate-drain spacing of 3 um.\n