Normally-Off-β -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure

2020/01/28 by Zhaoqing Feng, Xusheng Tian, Zhe Li +10 · 2 citations
Materials Science · #Ga2O3 and related materials #ZnO doping and properties #Electronic and Structural Properties of Oxides

paper · doi:10.1109/led.2020.2970066

Abstract

In this work, we have demonstrated normallyoff β-Ga2O3metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D-) and Enhancement (E-) mode device, respectively, which shows negligible current reduction. Steep subthreshold swing (SS) of 72 mV/dec and breakdown voltage of 670 V were also obtained in the E-mode MOSFET. Furthermore, after gate stess test of 10 V for 105s was performed, the threshold voltage (VTH) shift was 26.5 %. These electrical characteristics of the E-mode β-Ga2O3MOSFET shows the great potential for future power switch application.

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