2017/05/23 by Mohammad Masum Billah, Md Mehedi Hasan, Jin Jang
Engineering · Materials Science · #Electrical and Thermal Properties of Materials #Thin-Film Transistor Technologies #ZnO doping and properties
paper · doi:10.1109/led.2017.2707279
openalex publication_date 2017/05/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
We report the changes in device performance of flexible amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) by 1.65% tensile or compressive bending stress for 10 k times. The TFTs exhibit negative threshold voltage (ΔVTh) shift and enhanced drain current (ID). TFT performance under repetitive tensile bending stress exhibits comparatively large threshold voltage shift (ΔVTh= -2.3 V) than compressive bending stress (ΔVTh= -0.9 V), which might be originated from both the generation of interface states (Nint) and gap trap density (dNgap/dE) by 3.5 × 1011/cm2and 5.7 × 1012/cm2eV, respectively under tensile bending stress. These are much higher than those (Nint: 1.2 × 1011/cm2and dNgap/dE: 2.2 × 1012/cm2eV) for compressive bending. The increase in the DOS appears after both types of the bending stress which is related to the generation of oxygen vacancies. According to technology computer aided design simulation, the 10 k times repetitive compressive bending stress generates donor like states (ΔNGD) ~ 2 × 1016cm-3and tensile bending stress generates ΔNGD~ 9.5 × 1016cm-3at ~E C - 0.35 eV.