2002/06/15 by V. A. Kuprievich, Kuprievich, V. A., O. L. Kapitanchuk +4
Engineering · Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Semiconductor materials and devices #Superconductivity (cond-mat.supr-con) #cond-mat.supr-con
paper · pdf · doi:10.48550/arxiv.cond-mat/0206290
3 pages (RevTex), 2 PS figures (reported at 4th Intern. Conf. on Electronic Processes in Organic Materials, Lviv(Ukraine), June 3-8, 2002)
arxiv created 2002/06/15 · openalex publication_date 2002/06/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The calculations of the charge distribution in C60-based FET structure are presented. A simple model is proposed to describe the distribution of the injected electrons or holes between two-dimensional layers. The calculations show that the relative charge distribution between the layers turns to be independent on the total amount of injected charges. The charge density is maximal on the surface layer and drops exponentially with the depth increase. The relative amounts of injected charge involved in the top layer are 73 and 64 per cent in the case of electron and hole injection, respectively. Thus, the charge localization on the crystal surface turns to be markedly different from near complete one that was obtained earlier within tight- binding model for the charge concentration providing superconductivity.