2002/10/01 by V. Y. Butko, Butko, V. Y., A. P. Ramirez +3
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0210029
arxiv created 2002/10/01 · arxiv updated 2009/11/30
We report on the conductance from two-contact carrier injection in C60 single crystals. In the nonlinear regime, the current and voltage obey a power law, I \~ Vm, where m can be as high as 10 at room temperature. This nonlinear behavior - the resistance decreases by 6 orders of magnitude without saturation - is among the highest reported for organic systems, and can be explained by injection of free carriers into the trap-filling region. We find that H2 annealing suppresses shallow traps and enhances nonlinearity. Two limiting types of temperature dependence of the nonlinear resistance are observed - decreasing and increasing resistance at the orientational ordering temperature. A simple model incorporating deep traps is presented to understand this behavior and the impact of this model on possible field-effect transistor action is discussed.