High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer

2025/12/04 by Peetroons, Xander, Luo, Xunyao, Yang, Tsung-Yeh +26
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.2512.05052

openalex publication_date 2025/12/04 · openalex created_date 2025/12/06 · openalex updated_date 2026/08/01

Abstract

We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the T^Rabi from 7 to 11 μs at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 ± 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.

Citations

• Precision high-speed quantum logic with holes on a natural silicon foundry platform
• Robust spin-qubit control in a natural Si-MOS quantum dot using phase modulation
• Single-qubit gates with errors at the 10^-7 level
• The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
• Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits
• Passive and active suppression of transduced noise in silicon spin qubits

Related

• Robust spin-qubit control in a natural Si-MOS quantum dot using phase modulation
• Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium
• Radio-frequency cascade readout of coupled spin qubits fabricated using a 300~mm wafer process
• Precision high-speed quantum logic with holes on a natural silicon foundry platform
• High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots