1996/11/11 by A. E. Chubykalo, Andrew Chubykalo, D. A. Contreras‐Solorio +6
Engineering · Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Near-Field Optical Microscopy #Photonic and Optical Devices #Semiconductor Quantum Structures and Devices #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/9611076
ReVTeX file, 9pp., 6 figures available on request
arxiv created 1996/11/11 · openalex publication_date 1996/11/11 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study long-wavelength polar optical modes at semiconductor interfaces of GaAs|Al(x)Ga(1-x)As and take into account influence of the Al concentration. We have considered two cases in which the interface is kept at unfixed and fixed electrostatic potential. The spectrum of excitation then shows existence of localized and resonant modes to depend on the concentration of Al. For the case of a fixed electrostatic potential, a splitting of the resonant mode near the transverse threshold is found for certain ranges of the concentration x. The existence of these modes has been obtained by computing the spectral strength through the Surface Green Function Matching (SGFM) method.