Polarized Raman Analysis at Low Temperature to Examine Interface Phonons in InAs/GaAs_(1-x)Sb_x Quantum Dot Heterostructures

2024/09/15 by Priyesh Kumar, Kumar, Priyesh, Sudip K. Deb +5
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Applied Physics (physics.app-ph) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.2409.09631

openalex publication_date 2024/09/15 · openalex created_date 2024/10/24 · openalex updated_date 2026/07/28

Abstract

An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The effect of Sb-content on the frequency positions of these phonon modes has been very well correlated with the simulated strain. The Raman peaks show different frequency shifts in the heterostructure with varying Sb-content in the capping layer. This shift is attributed to the strain relaxation, bigger size of quantum dots and type-II band alignment.

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