2008/11/05 by A. Ducanchez, Arnaud Ducanchez, L. Cerutti +2
Engineering · Chemistry · Physics and Astronomy · #Semiconductor Lasers and Optical Devices #Spectroscopy and Laser Applications #Semiconductor Quantum Structures and Devices
paper · doi:10.1049/el:20082845
The first electrically-pumped GaSb-based vertical cavity surface emitting lasers emitting above 2.5 µm at room temperature are reported. This monolithic all-epitaxial structure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. Devices with a diameter of 30 µm operate in quasi-CW (1 µs, 5%) at 2.52 µm above 300 K. A minimum threshold current of 4.7 kA/cm2 in pulsed operation (100 ns, 0.5%) was obtained at 251 K with these devices.