2008/01/30 by Alexander Bachmann, A. Bachmann, Tsong‐Shin Lim +7 · 2 citations
Engineering · Physics and Astronomy · #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #Photonic and Optical Devices
paper · doi:10.1049/el:20083430
A novel concept for electrically pumped GaSb-based vertical cavity surface emitting lasers including a structured buried tunnel junction as current aperture is presented. Continuous-wave room temperature operation at 2.325 µm has been achieved. Devices with an aperture diameter of 9 µm show threshold currents of 3.3 mA, threshold voltages of 0.87 V and an output power of 87 µW.